70nm NMOSFET Fabrication with 12nm n^+-p Junctions Using As^+_2 Low Energy Implantations

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-04-01

著者

• PARK Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu

• CHOI Byung

  Inter-University Semiconductor Research Center, Seoul National University

• LEE Jong

  Inter-University Semiconductor Research Center, Seoul National University

• Choi B

  Seoul National Univ. Seoul Kor

• SUNG Suk

  Inter-University Semiconductor Research Center, School of Electrical Engineering, Seoul Nat'l Univ.

• Kang Sangwoo

  Seoul National Univ. Seoul Kor

• Sung Suk

  Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci

• Sim Jae

  Inter-university Semiconductor Research Center And School Of Electrical Engineering Seoul National U

• Lee Jong

  Inter-univ. Semicon. Res. Center Seoul Nat. Univ.

• Choi Byung

  Inter-university Semiconductor Research Center And School Of Electrical Engineering Seoul National U

• Kang Sangwoo

  Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

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