Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices(Novel MOSFET Structures,<Special Section>Fundamentals and Applications of Advanced Semiconductor Devices)
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概要
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One of 3-D devices to achieve high density arrays was adopted in this study, where source and drain junctions are formed along the silicon fin. The screening by adjacent high fins for large sensing margin makes it hard to ion-implant with high angle so that vertical ion implantation is inevitable. In this study, the dependency of current characteristics on doping profiles is investigated by 3-D numerical analysis. The position of concentration peak and the doping gradient are varied to look into the effects on driving currents. Through these analyses, the optimum condition of ion implantation for 3-D devices is estimated.
- 社団法人電子情報通信学会の論文
- 2007-05-01
著者
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Kim Jong
Interdisciplinary Program in Radiation Applied Life Science, Seoul National University College of Me
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LEE Jung
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu
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CHO Seongjae
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu
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PARK Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu
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Kim Jong
Inter-university Semiconductor Research Center Seoul National University:school Of Electrical Engine
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Park Il
Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National
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Park Il
Inter-university Semiconductor Research Center Seoul National University:school Of Electrical Engine
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Cho Seongjae
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu
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Yun Jang-Gn
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci
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Shin Hyungcheol
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci
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LEE Jong-Duk
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci
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Lee J
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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Yun Jang‐gn
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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Lee Joung-eob
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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Yun Jang-gn
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu
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Park Il
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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Shin Hyungcheol
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu
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Yun Jang
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu
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Lee Jong
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat
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Lee Jong
Inter-university Semiconductor Research Center School Of Electrical Engineering Seoul Nat'l Uni
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Yur Jang-gn
School Of Electrical Engineering Seoul National University
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Shin Hyungcheol
Inter-university Semiconductor Research Center (isrc)
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Kim Jong
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Park Il
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Lee Jong-Duk
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, #059, 599 Gwanangno, Gwanak-gu, Seoul 151-744, Korea
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Lee Jung
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Cho Seongjae
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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