Design and simulation of single hole transistor with tunneling barrier formed by fixed charge (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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概要

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• Single Hole Transistor (SHT) with tunneling barrier formed by silicon-silicon nitride fixed charge is designed and simulated by device simulator (SILVACO). Electric Barrier formed by Fixed Charge (EBFC) is more advantageous in terms of room temperature operation than electric barrier induced through electrodes. This is because the capacitance between the quantum dot and barrier forming electrodes can be eliminated, leading to considerable increase in charging energy and hence increase in operation temperature. Gate bias dependence of SHT with EBFC is characterized using a device simulator. In addition, devices with different dimensional parameters, doping concentrations and materials are utilized to optimize the tunneling barrier.

• 社団法人電子情報通信学会の論文
• 2007-06-18

著者

• LEE Joung-Eob

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu

• PARK Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu

• Park Byung‐gook

  School Of Electrical Engineering Seoul National University

• Park Byung-gook

  School Of Electrical Engineering Seoul National University

• Lee J

  School Of Electrical Engineering Seoul National University

• Kang Sangwoo

  Seoul National Univ. Seoul Kor

• KANG Sangwoo

  Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci

• LEE Dong-Seup

  Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci

• Lee J

  Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci

• Lee Joung-eob

  Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci

• Sim Jae

  Inter-university Semiconductor Research Center And School Of Electrical Engineering Seoul National U

• Lee Dong-seup

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu

• Kang Sangwoo

  Inter-university Semiconductor Research Center Seoul National University:school Of Electrical Engine

• Lee Jong

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat

• Lee Jong

  Inter-university Semiconductor Research Center School Of Electrical Engineering Seoul Nat'l Uni

• Kang Sangwoo

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu

• Kang Sangwoo

  Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

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