Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices

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概要

• 論文の詳細を見る

• During the programming operation of the NAND-type flash memory array, the program-inhibited cell is biased with positive voltages on the source and drain (S/D) junctions while program voltage is applied on the word-line (WL), which enables the self-boosting of Si channel potential to avoid unwanted program operation. As the device is aggressively scaled down and the channel doping concentration is increased accordingly, the couplings among WL, floating gate or storage node, and Si channel which are crucial factor in the self-boosting scheme should be investigated more thoroughly. In this work, the dependence of channel potential self-boosting on the channel length and doping concentration in 2-D conventional planar and 3-D FinFET NAND-type flash memory devices based on bulk-Si is investigated by numerical device simulation. Since there is seldom feasible ways of measuring the channel potential by physical probing, series of simulation works are thought to offer insightful results.

• 社団法人電子情報通信学会の論文
• 2009-06-17

著者

• LEE Jung

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu

• CHO Seongjae

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu

• PARK Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu

• Park Byung‐gook

  School Of Electrical Engineering Seoul National University

• Park Byung-gook

  School Of Electrical Engineering Seoul National University

• Park Byung‐gook

  Seoul National Univ. Seoul Kor

• Lee J

  School Of Electrical Engineering Seoul National University

• Cho Seongjae

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu

• Yun Jang-Gn

  Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci

• Shin Hyungcheol

  Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci

• Kim Yoon

  Inter-university Semiconductor Research Center And School Of Electrical Engineering Seoul National U

• Kim Yun

  Inter-university Semiconductor Research Center (ISRC)

• Lee J

  Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci

• Yun Jang‐gn

  Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci

• Kim Yoon

  Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci

• Lee Joung-eob

  Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci

• Yun Jang-gn

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu

• Shin Hyungcheol

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu

• Lee Jong

  Inter-university Semiconductor Research Center And School Of Electrical Engineering Seoul National U

• Yun Jang

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu

• Park Byung-gook

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat

• Lee Jong

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat

• Lee Jong

  Inter-university Semiconductor Research Center School Of Electrical Engineering Seoul Nat'l Uni

• Kim Yoon

  School Of Electrical Engineering Seoul National University

• Yur Jang-gn

  School Of Electrical Engineering Seoul National University

• Shin Hyungcheol

  Inter-university Semiconductor Research Center (isrc)

• Park Byung-gook

  Inter-university Semiconductor Research Center And School Of Electrical Engineering Seoul National U

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea

• Lee Jung

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea

• Cho Seongjae

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

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