Single Electron Memory with a Defined Poly-Si Dot Based on Conventional VLSI Technology

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概要

• 論文の詳細を見る
• 2001-09-25

著者

• PARK Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu

• LEE Jong

  Inter-University Semiconductor Research Center, Seoul National University

• Lee J

  School Of Electrical Engineering Seoul National University

• Kim D

  Seoul National Univ. Seoul Kor

• SUNG Suk-Kang

  Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National

• KIM Dae

  Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National

• SIM Jae-Sung

  Inter-University Semiconductor Research Center, Seoul National University

• Kang Sangwoo

  Seoul National Univ. Seoul Kor

• Lee J

  Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci

• Kim D

  Inter-university Semiconductor Research Center School Of Electrical Engineering Seoul National Unive

• Kim Dae

  Inter-university Semiconductor Research Center School Of Electrical Engineering Seoul National Unive

• Sim Jae

  Inter-university Semiconductor Research Center And School Of Electrical Engineering Seoul National U

• Sim J‐s

  Seoul National Univ. Seoul Kor

• Sung Suk-kang

  Inter-university Semiconductor Research Center And School Of Electrical Engineering Seoul National U

• Lee Jong

  Inter-univ. Semicon. Res. Center Seoul Nat. Univ.

• Sim Jae-sung

  Inter-university Semiconductor Research Center And School Of Electrical Engineering Seoul National U

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

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