70nm Silicon-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory Devices Using Fowler-Nordheim Programming and Hot Hole Erase Method
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-30
著者
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PARK Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu
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Lee Jo-won
Material And Device Lab. Samsung Advanced Institute Of Technology
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Kim Moonkyung
Material And Device Lab. Samsung Advanced Institute Of Technology
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Kim Juhyung
Material And Device Lab. Samsung Advanced Institute Of Technology
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Jeong Younseok
Material And Device Lab. Samsung Advanced Institute Of Technology
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CHAE Soodoo
Material and Device Lab., Samsung Advanced Institute of Technology
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LEE Changju
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul Na
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SUNG Sukkang
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul Na
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SIM Jaeseong
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul Na
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YOON Sewook
Material and Device Lab., Samsung Advanced Institute of Technology
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RYU Wonil
Material and Device Lab., Samsung Advanced Institute of Technology
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KIM Taehun
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul Na
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KIM Chungwoo
Material and Device Lab., Samsung Advanced Institute of Technology
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