Room-Temperature Operation of a Single-Electron Transistor Made by Oxidation Process Using the Recessed Channel Structure

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概要

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• We have fabricated single-electron transistors (SETs) with a recessed channel structure using a thermal oxidation process for decreasing the size of quantum dots (QDs). Moreover, the QDs are defined on a one-dimensional silicon nanowire by two tunneling barriers induced through thermal oxidation. Also, for decreasing the control gate capacitance, the dimension of the control gate depends not on the electron beam or photolithography method. The control gate is formed by the controllability of chemical vapor deposition (CVD). Owing to this small capacitance, we have clear Coulomb oscillation peaks and negative differential trans-conductance curves at room temperature. The oscillation period of the fabricated device is approximately 1.9 V.

• 2010-11-25

著者

• KANG Kwon-Chil

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu

• LEE Joung-Eob

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu

• PARK Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu

• Wan Kim

  Inter-University Semiconductor Research Center (ISRC)

• Yun Jang-gn

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu

• Shin Hyungcheol

  Inter-university Semiconductor Research Center (isrc)

• Kim Garam

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Computer Science Seoul National University

• SHIM Won

  Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University

• Lee Jong-Ho

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

• Lee Jong-Ho

  Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Korea

• Lee Jung-Han

  Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Korea

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea

• Shim Won

  Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea

• Kim Garam

  Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

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