Kim Garam | Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

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著作論文

Fin and Recess-Channel Metal Oxide Semiconductor Field Effect Transistor for Sub-50 nm Dynamic Random Access Memory Cell
Room-Temperature Operation of a Single-Electron Transistor Made by Oxidation Process Using the Recessed Channel Structure
Dual Gate Single-Electron Transistors with a Recessed Channel and Underlapped Source/Drain Structure
Dynamic driving current using side gate bias of single-electron transistors
Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using VT-Control Doping Region
Comparative Study on Top- and Bottom-Source Vertical-Channel Tunnel Field-Effect Transistors
Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using V_T-Control Doping Region
Design of Thin-Body Double-Gated Vertical-Channel Tunneling Field-Effect Transistors for Ultralow-Power Logic Circuits
Enhancement of Radiative Recombination by Different Indium Composition of Multiple Quantum Barriers in GaN-Based Light-Emitting Diodes
Enhancement of Radiative Recombination by Different Indium Composition of Multiple Quantum Barriers in GaN-Based Light-Emitting Diodes (Special Issue : Microprocesses and Nanotechnology)

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