Kim Hyun | Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science (EECS), Seoul National University, Seoul 151-742, Korea

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Silicon Quantum Tunneling Devices - FIBTET and MOSET
Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using VT-Control Doping Region
Design Guideline of Si-Based L-Shaped Tunneling Field-Effect Transistors
Comparative Study on Top- and Bottom-Source Vertical-Channel Tunnel Field-Effect Transistors
Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using V_T-Control Doping Region
Design of Thin-Body Double-Gated Vertical-Channel Tunneling Field-Effect Transistors for Ultralow-Power Logic Circuits
Analytical Modeling of Realistic Single-Electron Transistors Based on Metal-Oxide-Semiconductor Structure with a Unique Distribution Function in the Coulomb-Blockade Oscillation Region
L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications
Complementary-Metal--Oxide--Semiconductor Technology-Compatible Tunneling Field-Effect Transistors with 14 nm Gate, Sigma-Shape Source, and Recessed Channel

スポンサーリンク