Analytical Modeling of Realistic Single-Electron Transistors Based on Metal-Oxide-Semiconductor Structure with a Unique Distribution Function in the Coulomb-Blockade Oscillation Region

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概要

• 論文の詳細を見る

• Novel metal-oxide-semiconductor (MOS)-based single-electron transistors (MOSETs) using band-to-band tunneling mechanism have been fabricated by the conventional silicon-on-insulator (SOI) MOSFET technologies. The fabricated SETs have tunnel barriers and quantum-dot formed by an extremely small channel between two p+-n+ tunnel junctions in the degenerately doped SOI MOSFET. Coulomb oscillation was observed in the subthreshold region at liquid nitrogen temperature and total capacitance of quantum-dot is 2.25 aF which is well matched to the device geometry. In order to validate the operation principle of our device, we have implemented an analytical device model in the simulation program with integrated circuit emphasis (SPICE). SPICE simulation of our model with a unique distribution function has reproduced the experimental results with good agreement for wide gate and drain bias range.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-15

著者

• KIM Dae

  Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National

• Baek Gwanghyeon

  Inter-university Semiconductor Research Center School Of Electrical Engineering Seoul National Unive

• Lee Jong

  Inter-univ. Semicon. Res. Center Seoul Nat. Univ.

• Song Ki-whan

  Inter-university Semiconductor Research Center School Of Electrical Engineering Seoul Nat'l Uni

• Huh Jung

  Inter-university Semiconductor Research Center School Of Electrical Engineering Seoul Nat'l Uni

• Kim Kyung

  Inter-university Semiconductor Research Center School Of Electrical Engineering Seoul Nat'l Uni

• Song Ki-Whan

  Inter-University Semiconductor Research Center, School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-ku, Seoul 151-742, Korea

• Huh Jung

  Inter-University Semiconductor Research Center, School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-ku, Seoul 151-742, Korea

• Kim Hyun

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science (EECS), Seoul National University, Seoul 151-742, Korea

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea

• Park Byung-Gook

  Inter-University Semiconductor Research Center, School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-ku, Seoul 151-742, Korea

• Baek Gwanghyeon

  Inter-University Semiconductor Research Center, School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-ku, Seoul 151-742, Korea

• Kim Hyun

  Inter-University Semiconductor Research Center, School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-ku, Seoul 151-742, Korea

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

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