A New Recessed Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Selectively Halo-Doped Channel and Deep Graded Source/Drain

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概要

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• To improve the performance and reliability of deep submicron metal-oxide-semiconductor (MUS) devices, we propose a gate-recessed metal-oxide-semiconductor field-effect transistor (GR-MOSFET) which has a selectively halo-doped recessed channel and a deep graded source/drain formed without counter-doping. The GR-MOS structure eliminates the tradeoff between drain-induced barrier lowering (DIBL) and hot carrier effect which are most important in deep submicron device design. It also reduces the V_T lowering effect and lateral electric field at the drain. The fabricated 0.25 μm GR-MOSFET with a 10 nm gate oxide has exhibited 15% higher transconductance, more than 20% increased saturation current at V_D=V_G=3V, 1V higher BV_<DSS> and 6 times less substrate current compared with a LDD-MOSFET of same device dimension.

• 社団法人応用物理学会の論文
• 1994-01-30

著者

• Park Young-june

  Inter-university Semiconductor Research Center (isrc) And Department Of Electronics Engineering Seou

• Lee Woo-hyeong

  Inter-university Semiconductor Research Center (isrc) And Department Of Electronics Engineering Seou

• Lee Jong

  Inter-university Semiconductor Research Center (isrc) And Department Of Electronics Engineering Seou

• Lee Jong

  Inter-univ. Semicon. Res. Center Seoul Nat. Univ.

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