Metal FEAs Fabricated with Local Oxidation of Polysilicon for Large-Area Display Applications

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概要

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• For large area displays, metal FEAs were fabricated with local oxidation of polysilicon. The field emitter arrays(FEAs) with 0.7-μm-diameter gate apertures were made, showing asymmetry of gate edge and roughness on gate surface. However, the electrical characteristics are well compared to the FEAs made from single crystal silicon. The anode current of 62.5 μA(0.1μA/tip) is measured at the gate bias of 52V for the 625-tip array, while the gate current was less than 0.3 % of the anode current.

• 社団法人電子情報通信学会の論文
• 1995-10-24

著者

• LEE Jong

  Inter-University Semiconductor Research Center, Seoul National University

• Lee J

  School Of Electrical Engineering Seoul National University

• Kim I

  Seoul National Univ. Seoul Kor

• Lee Chun

  Inter-university Semiconductor Research Center(isrc) And Dept. Of Electronics Engineering Seoul Nat&

• Lee Jae

  Korea Research Institute Of Chemical Technology

• Kwon Sang

  Dept. of Electronics Eng., Kyungwon Univ.

• Kwon Sang

  Dept. Of Electronics Eng. Kyungwon Univ.

• Lee Jong

  Inter-university Semiconductor Research Center And School Of Electrical Engineering Seoul National U

• Kim II

  Inter-University Semiconductor Research Center(ISRC) and Dept. of Electronics Engineering, Seoul Nat

• Lee Jong

  Inter-univ. Semicon. Res. Center Seoul Nat. Univ.

• Kwon Sang

  Dept. of Electronics Eng. , Kyungwon Univ.

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