As Preamorphization of the Predeposited Amorphous Si Layer for the Formation of the Silicided Ultra Shallow p^+-n Junction
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-30
著者
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Lee J
School Of Electrical Engineering Seoul National University
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Kim Young
Applied Physics Group Korea Institute Of Science And Technology
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Kim Y
Sungkyukwan Univ. Kyunggi‐do Kor
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Lee Jae
Korea Research Institute Of Chemical Technology
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KWON SANG
Department of Internal Medicine and Institute of Lifelong Health, Yonsei University Wonju College of
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Chun Kuk
Isrc Seoul National University
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Kwon Sang
Dept. Of Electronics Eng. Kyungwon Univ.
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Lee Jong
Inter-university Semiconductor Research Center And School Of Electrical Engineering Seoul National U
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KIM Yeo
ISRC, Seoul National University
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CHUN Kuk
ISRC, Seoul National University
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LEE Jong
ISRC, Seoul National University
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Kwon Sang
Department Of Dermatology Hanyang University College Of Medicine
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Kwon Sang
Department Of Chemistry Yeungnam University
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