The Effectof Li-Ion-Doped Porous MgO Film on Operational Memory Margin of ac-Plasma Display Panel
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概要
- 論文の詳細を見る
An ac-type plasma display panel (ac-PDP) made with Li-ion-doped MgO film formed using a sol–gel precursor is characterized and compared with an ac-type PDP with an MgO film formed by e-beam evaporation. The operational memory margin of a test panel with a pure MgO film formed using the printing method is very high due to the porous surface of the films. For a test panel with Li-ion-doped MgO, the operational margin decreases as the dopant concentration increases. The secondary electron emission from a pure printed MgO film is highly unstable because of the severe surface charging due to the porosity of the MgO films. The surface charging decreases linearly as the dopant concentration increases. This secondary electron emission (SEE) result implies that a linear relationship exists between the memory margin of an ac-PDP and the charging phenomenon of the MgO surface after the SEE.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-09-15
著者
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Uchiike Heiju
Department Of Electrical And Electronic Engineering Saga University
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Lee Seong
Department Of Advanced Materials Engineering Korea Polytechnic University
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Ahn Sung
Department Of Dermatology And Institute Of Basic Medical Science Yonsei University Wonju College Of
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Kim Kwangho
Department Of Architectural Engineering Yonsei University
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Kwon Sang
Department Of Chemistry Yeungnam University
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Uchiike Heiju
Department of Information Display, Kyung Hee University, Seoul 130-701, Korea
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Ahn Sung
Department of Electronic Engineering, Kyungwon University, Seongnam 461-701, Korea
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Ahn Sung
Department of Advanced Materials Engineering, Korea Polytechnic University, Shihung 429-793, Korea
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Lee Seong
Department of Advanced Materials Engineering, Korea Polytechnic University, Shihung 429-793, Korea
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Kwon Sang
Department of Electronic Engineering, Kyungwon University, Seongnam 461-701, Korea
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Kim Kwangho
Department of Electronic Engineering, Kyungwon University, Seongnam 461-701, Korea
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