The Effect of Potassium-Doped MgO Films on Discharge Characteristics in AC-Plasma Display Panel
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概要
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In this paper, we investigate how various concentrations of potassium-doped MgO films affect the discharge characteristics in ac-type plasma display panel. The firing voltages of ion-doped MgO films indicate that the potassium ions in MgO film clearly produce a low discharge voltage. The static memory margin of a test panel decreases as the concentration of potassium ions increases. The X-ray photoelectron spectroscopy results, which confirm that the potassium doping creates donor energy levels in the band gap of MgO, agree well with the varied behavior of secondary electron emission yields in various K+-doped MgO films.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-06-15
著者
-
Lee Seong
Department Of Advanced Materials Engineering Korea Polytechnic University
-
Choi Kyung
Department Of Biology College Of Natural Science Kyungpook National University
-
Choi Kyung
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea
-
Ahn Sung
Department of Advanced Materials Engineering, Korea Polytechnic University, Shihung 429-793, Korea
-
Ryu Si
Department of Advanced Materials Engineering, Korea Polytechnic University, Shihung 429-793, Korea
-
Lee Seong
Department of Advanced Materials Engineering, Korea Polytechnic University, Shihung 429-793, Korea
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Moon Sung
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
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