Memristive Behavior in Electrohydrodynamic Atomized Layers of Poly[2-methoxy-5-(2'-ethylhexyloxy)--(p-phenylenevinylene)] for Next Generation Printed Electronics

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概要

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• Poly[2-methoxy-5-(2'-ethylhexyloxy)--(p-phenylenevinylene)] (MEH:PPV) based organic memristor (memory resistor) has been fabricated on the indium--tin oxide (ITO) coated poly(ethylene terepthalate) (PET) substrate by the electrohydrodynamic atomization (EHDA) technique. Thin jet containing MEH:PPV polymer was generated through a capillary under electrical stresses. The jet was broken into small droplets by adjusting the distance from nozzle to substrate and collected over the substrate under normal room conditions, consequently a high quality layer of MEH:PPV was achieved with an average thickness of 168 nm. The layer was morphologically characterized by a field emission scanning electron microscope (FESEM) analysis. X-ray photoelectron spectroscope (XPS) analysis was also carried out to confirm the chemistry of the deposited material. Electrically, ITO/MEH:PPV/Ag fabricated memristor was found to be switchable between high state and low state between \pm 4 V. The research work provides the memristive behavior in electrohydrodynamic atomized layers of MEH:PPV to be used for the next generation printed electronics application.

• 2013-05-25

著者

• Choi Kyung

  Department Of Biology College Of Natural Science Kyungpook National University

• Awais Muhammad

  Department of Mechatronics Engineering, Jeju National University, Jeju 690-756, Korea

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• Memristive Behavior in Electrohydrodynamic Atomized Layers of Poly[2-methoxy-5-(2'-ethylhexyloxy)--(p-phenylenevinylene)] for Next Generation Printed Electronics

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