Integration Process of Impact-Ionization Metal-Oxide-Semiconductor Devices with Tunneling Field-Effect-Transistors and Metal-Oxide-Semiconductor Field-Effect Transistors

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-01-15

著者

• PARK Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu

• CHOI Woo

  Inter-University Semiconductor Research Center, Seoul National University

• LEE Jong

  Inter-University Semiconductor Research Center, Seoul National University

• Choi W

  Inter-university Semiconductor Research Center Seoul National University

• Choi Woo

  Inter-university Semiconductor Research Center Seoul National University

• Lee J

  Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci

• Lee Joung-eob

  Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci

• Lee Jong

  Inter-univ. Semicon. Res. Center Seoul Nat. Univ.

• Lee Jong

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat

• Choi Woo

  Inter-university Semiconductor Research Center and School of Electrical Engineering, Seoul National University, ENG 420-016, Sillim-dong, Gwank-gu, Seoul 151-722, Korea

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

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