Novel Tunneling Devices with Multi-Functionality

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概要

• 論文の詳細を見る

• Multi-functionality of a tunneling device was observed for the first time in nanoscale region. 70-nm tunneling devices with novel structure were successfully fabricated and analyzed. They act both as an n-channel surface junction tunneling (SJT) device and an n-channel tunneling field-effect transistor (TFET) depending on the bias conditions. P-channel device operation was not observed in this work since the doping profile of n+ region was not as abrupt as that of p+ region. When the fabricated device was operated as an n-channel SJT device, negative differential conductance (NDC) was clearly observed with a peak-to-valley current ratio (PVCR) of 1.2 at room temperature. On the other hand, in the case of the n-channel TFET operation, output current is saturated with the increase of the drain voltage.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-04-30

著者

• Lee Jong

  Inter-univ. Semicon. Res. Center Seoul Nat. Univ.

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea

• Choi Woo

  Inter-university Semiconductor Research Center and School of Electrical Engineering, Seoul National University, ENG 420-016, Sillim-dong, Gwank-gu, Seoul 151-722, Korea

• Choi Woo

  Inter-University Semiconductor Research Center, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Korea

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