On the Characteristics and Spatial Dependence of Channel Thermal Noise in Nanoscale Metal–Oixde–Semiconductor Field Effect Transistors

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概要

• 論文の詳細を見る

• The physical origin of the channel thermal noise in nanoscale RF metal–oxide–semiconductor field effect transistors (MOSFETs) is characterized based on an analytical noise model, which takes into account velocity saturation, channel length modulation, and carrier heating effect. These short channel effects increase the channel thermal noise compared with predicted noise from long-channel theory. Among the three effects, the channel length modulation is found to be the most important short channel effect on the channel thermal noise modeling. In addition, spatial distribution of the channel thermal noise is analyzed by using impedance field method. From this analysis, it is identified that the channel thermal noise is dominated by source side noise contributions.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• Jeon Jongwook

  Inter-university Semiconductor Research Center (isrc) And School Of Ee Seoul National University

• Lee Jong

  Inter-univ. Semicon. Res. Center Seoul Nat. Univ.

• Shin Hyungcheol

  Inter-university Semiconductor Research Center (isrc)

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea

• Jeon Jongwook

  Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Korea

• Yun Yeonam

  Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Korea

• Kim Junsoo

  Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Korea

• Shin Hyungcheol

  Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Korea

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

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