FN Stress Induced Degradation on Random Telegraph Signal Noise in Deep Submicron NMOSFETs
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概要
- 論文の詳細を見る
As the gate area decreases to the order of a square micron, individual trapping events can be detected as fluctuations between discrete levels of the drain current, known as random telegraph signal (RTS) noise. Many circuit application areas such as CMOS Image sensor and flash memory are already suffering from RTS noise. Especially, in case of flash memory, FN stress causes threshold voltage shift problems due to generation of additional oxide traps, which degrades circuit performance. In this paper, we investigated how FN stress effects on RTS noise behavior in MOSFET and monitored it in both the time domain and frequency domain.
- （社）電子情報通信学会の論文
- 2008-05-01
著者
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Shin Hyungcheol
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci
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SONG Ickhyun
Inter-University Semiconductor Research Center (ISRC) and School of EE, Seoul National University
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Song Ickhyun
Inter-university Semiconductor Research Center (isrc) And School Of Ee Seoul National University
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Song Ickhyun
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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LEE Hochul
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci
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YOON Youngchang
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci
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Shin Hyungcheol
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu
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Shin Hyungcheol
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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Lee Hochul
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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Yoon Youngchang
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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Shin Hyungcheol
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat
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Shin Hyungcheol
Inter-university Semiconductor Research Center (isrc)
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Shin Hyungcheol
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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