A Compact Model for Channel Coupling in Sub-30 nm NAND Flash Memory Device
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概要
- 論文の詳細を見る
This paper presents an analytic model for NAND flash array where channel coupling embodies. Channel coupling effect which is becoming a more serious issue in developing high-density flash memory devices should be effectively suppressed. By applying the coupling model to a 30-nm NAND flash product, the simulation showed a good agreement with the measurement results. Also, complex problems in scaled NAND flash memories could be accurately explained by circuit simulations. This evaluation will be useful in developing high-density multi-level cell (MLC) NAND flash technologies.
- 2011-10-25
著者
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Shin Hyungcheol
Inter-university Semiconductor Research Center (isrc)
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Shin Hyungcheol
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Lim Youngho
Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung 445-701, Korea
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Song Youngsun
Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung 445-701, Korea
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Kang Myounggon
Inter-University Semiconductor Research Center (ISRC)
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Joe Sung-Min
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Lim Youngho
Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Republic of Korea
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Hahn Wookghee
Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Republic of Korea
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Park Il
Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Republic of Korea
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Lee Hocheol
Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Republic of Korea
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Choi Kihwan
Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Republic of Korea
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Chae Dong
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Song Youngsun
Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Republic of Korea
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Kang Myounggon
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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