Shin Hyungcheol | Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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概要
- Shin Hyungcheolの詳細を見る
- 同名の論文著者
- Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Koreaの論文著者
関連著者
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Shin Hyungcheol
Inter-university Semiconductor Research Center (isrc)
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Shin Hyungcheol
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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LEE Jung
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu
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PARK Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu
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Kim Wandong
Inter-university Semiconductor Research Center
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Kwon Dae
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Lee Jong-Ho
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Ji Jung
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Lim Youngho
Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung 445-701, Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Song Youngsun
Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung 445-701, Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Lee Jung
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Lee Jung
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Kang Myounggon
Inter-University Semiconductor Research Center (ISRC)
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Joe Sung-Min
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Lim Youngho
Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Republic of Korea
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Hahn Wookghee
Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Republic of Korea
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Park Il
Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Republic of Korea
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Lee Hocheol
Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Republic of Korea
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Choi Kihwan
Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Republic of Korea
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Chae Dong
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Song Youngsun
Flash Design Team, Memory Business, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Republic of Korea
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Kang Myounggon
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
著作論文
- Investigation of Threshold Voltage Disturbance Caused by Programmed Adjacent Cell in Virtual Source/Drain NAND Flash Memory
- A Compact Model for Channel Coupling in Sub-30 nm NAND Flash Memory Device