L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications

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概要

• 論文の詳細を見る

• In order to implement complementary logic function with L-shaped tunneling field-effect transistors (TFETs), current drivability and subthreshold swing (SS) need to be improved more. For this purpose, high-k material such as hafnium dioxide (HfO2) has been used as gate dielectric rather than silicon dioxide (SiO2). The effects of device parameters on performance have been investigated and the design of L-shaped TFETs has been optimized. Finally, the performance of L-shaped TFET inverters have been compared with that of conventional TFET ones.

著者

• Choi Woo

  Department Of Dermatology Sanggye Paik Hospital Inje University College Of Medicine

• Shin Hyungcheol

  Inter-university Semiconductor Research Center (isrc)

• Kim Sang

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu

• Lee Jong-Ho

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

• Kim Hyun

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science (EECS), Seoul National University, Seoul 151-742, Korea

• Sun Min-Chul

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science (EECS), Seoul National University, Seoul 151-742, Korea

• PARK Byung-Gook

  Inter-University Semiconductor Research Center and Department of Electrical Engineering and Computer Science, Seoul National University

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

• LEE Jong-Ho

  Inter-University Semiconductor Research Center and Department of Electrical Engineering and Computer Science, Seoul National University

• SUN Min-Chul

  Inter-University Semiconductor Research Center and Department of Electrical Engineering and Computer Science, Seoul National University

• CHOI WOO

  Department of Chemical Engineering, Doshisha University

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