Analytical Model of Nano-Electromechanical (NEM) Nonvolatile Memory Cells
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概要
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The fringe field effects of nano-electromechanical (NEM) nonvolatile memory cells have been investigated analytically for the accurate evaluation of NEM memory cells. As the beam width is scaled down, fringe field effect becomes more severe. It has been observed that pull-in, release and hysteresis voltage decrease more than our prediction. Also, the fringe field on cell characteristics has been discussed.
- The Institute of Electronics, Information and Communication Engineersの論文
- 2012-05-01
著者
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Choi Woo
Department Of Dermatology Sanggye Paik Hospital Inje University College Of Medicine
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HAN Boram
Department of Electronic Engineering, Sogang University
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Han Boram
Department Of Electronic Engineering Sogang University
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