Radio Frequency Performance of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors
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概要
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Radio frequency (RF) performances of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) have been compared with those of SiO2-only and high-k-only TFETs in terms of f_{\text{T}}, f_{\text{max}}, gate capacitance, channel resistance, and transconductance. HG TFETs can have higher f_{\text{T}}/f_{\text{max}} and smaller switching time than SiO2-only TFETs and high-k-only TFETs because they have higher g_{\text{m}} and current drivability than SiO2-only TFET and smaller gate capacitance than high-k-only TFET.
- 2011-12-25
著者
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Kang In
School Of Electrical Engineering Seoul National University
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Choi Woo
Department Of Dermatology Sanggye Paik Hospital Inje University College Of Medicine
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Choi Woo
Department of Electronic Engineering, Sogang University, Seoul 121-742, Republic of Korea
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Jang Jung-Shik
Department of Electronic Engineering, Sogang University, Seoul 121-742, Republic of Korea
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CHOI WOO
Department of Chemical Engineering, Doshisha University
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