Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs
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概要
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We investigated the source-to-drain capacitance (Csd) due to DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channel SNW devices operating at high drain voltages have the positive value of Csd by DIBL effect. On the other hand, junctionless SNW MOSFETs without source/drain (S/D) <I>PN</I> junctions have negative or zero values by small DIBL effect. By considering the additional source-to-drain capacitance component, the accuracy of a small-signal model was significantly improved on the imaginary part of Y22-parameter.
- The Institute of Electronics, Information and Communication Engineersの論文
著者
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Kang In
School Of Electrical Engineering Seoul National University
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Kim Kyung
School of Chemical Engineering and Materials Science, Chung-Ang University, 221 Huksuk-dong, Dongjak-gu, Seoul 156-756, Korea
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Cho Seongjae
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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