Device and Circuit Codesign Strategy for Application to Low-Noise Amplifier Based on Silicon Nanowire Metal–Oxide–Semiconductor Field Effect Transistors
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概要
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In this study, a full-range approach from device level to circuit level design is performed for RF application of silicon nanowire (SNW) metal–oxide–semiconductor field effect transistors (MOSFETs). Both DC and AC analyses have been conducted to confirm the advantages of an SNW MOSFET over the conventional planar (CPL) MOSFET device having dimensional equivalence. Besides the intrinsic characteristic parameters, the extrinsic resistance and capacitance caused by wiring components are extracted from each device. On the basis of these intrinsic and extrinsic parameters, a multi-fingered 5.8 GHz low-noise amplifier (LNA) design adopting SNW MOSFETs has been achieved, which shows an improved gain of 17.5 dB and a noise figure of 3.1 dB over a CPL MOSFET LNA.
- 2010-04-25
著者
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Byung-Gook Park
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Hee-Sauk Jhon
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National Univeristy, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Se Hwan
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National Univeristy, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Lee Jung
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Cho Seongjae
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Seongjae Cho
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National Univeristy, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Hyungcheol Shin
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National Univeristy, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Jhon Hee-Sauk
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National Univeristy, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Byung-Gook Park
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National Univeristy, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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