Byung-Gook Park | Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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概要
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- 同名の論文著者
- Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Koreaの論文著者
関連著者
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Byung-Gook Park
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Cho Seongjae
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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LEE Dong
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu
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KANG Kwon-Chil
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu
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LEE Joung-Eob
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu
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CHO Seongjae
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu
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Endo Kazuhiko
Silicon Systems Research Laboratories Nec Corporation
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Meishoku Masahara
Silicon Nanoscale Device Group, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2-13 Tsukuba Central, Tsukuba, Ibaraki 305-8568, Japan
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Kunihiro Sakamoto
Silicon Nanoscale Device Group, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2-13 Tsukuba Central, Tsukuba, Ibaraki 305-8568, Japan
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Takashi Matsukawa
Silicon Nanoscale Device Group, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2-13 Tsukuba Central, Tsukuba, Ibaraki 305-8568, Japan
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Yongxun Liu
Silicon Nanoscale Device Group, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2-13 Tsukuba Central, Tsukuba, Ibaraki 305-8568, Japan
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Jung Han
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-742, Republic of Korea
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Joung-Eob Lee
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-742, Republic of Korea
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Hong-Seon Yang
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-742, Republic of Korea
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Hee-Sauk Jhon
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National Univeristy, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Kazuhiko Endo
Silicon Nanoscale Device Group, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2-13 Tsukuba Central, Tsukuba, Ibaraki 305-8568, Japan
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Se Hwan
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National Univeristy, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Dong Seup
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-742, Republic of Korea
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Shinichi O'uchi
Silicon Nanoscale Device Group, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2-13 Tsukuba Central, Tsukuba, Ibaraki 305-8568, Japan
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Lee Jung
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Seongjae Cho
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National Univeristy, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Seongjae Cho
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Kwon-Chil Kang
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-742, Republic of Korea
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Hyungcheol Shin
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National Univeristy, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Jhon Hee-Sauk
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National Univeristy, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Byung-Gook Park
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National Univeristy, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
著作論文
- Minimization of Gate-Induced Drain Leakage by Controlling Gate Underlap Length for Low-Standby-Power Operation of 20-nm-Level Four-Terminal Silicon-on-Insulator Fin-Shaped Field Effect Transistor
- Device and Circuit Codesign Strategy for Application to Low-Noise Amplifier Based on Silicon Nanowire Metal–Oxide–Semiconductor Field Effect Transistors
- Dual-Gate Single-Electron Transistor with Silicon Nano Wire Channel and Surrounding Side Gates