Design and Characterization of Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors
スポンサーリンク
概要
- 論文の詳細を見る
We report the first implementation of a modeling and simulation environment for the plasmonic terahertz (THz) detector based on the silicon (Si) field-effect transistor (FET) with a technology computer-aided-design (TCAD) platform. The nonresonant plasmonic behavior has been modeled by introducing a quasi-plasma electron box as a two-dimensional electron gas (2DEG) in the channel region. The alternate-current (AC) signal as an incoming THz wave radiation successfully induced a direct-current (DC) drain-to-source voltage as a detection signal in the broadband sub-THz frequency regime. The simulated dependences of photoinduced DC detection signals on structural parameters such as gate length and dielectric thickness confirmed the operation principle of the nonresonant plasmonic THz detector in the Si FET structure. We evaluated the design specifications of THz detectors considering both responsivity and noise equivalent power (NEP) as the typical performance metrics. The proposed methodologies provide the physical design platform for developing novel plasmonic THz detectors operating in the nonresonant detection mode.
- 2012-06-25
著者
-
HWANG Hee
School of Electrical & Mechanical Engineering, and Automation Technology Research Institute, Yonsei
-
Kim Kyung
School Of Food Biotechnology Woosong University
-
Han Seong-Tae
Korea Electrotechnology Research Institute, Ansan 426-170, Korea
-
Han Seong-Tae
Korea Electrotechnology Research Institute, Ansan, Gyeonggi 426-170, Korea
-
Park Kibog
School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798, Korea
-
Park Wook-Ki
Korea Electrotechnology Research Institute, Ansan, Gyeonggi 426-170, Korea
-
Kim Kyung
School of Chemical Engineering and Materials Science, Chung-Ang University, 221 Huksuk-dong, Dongjak-gu, Seoul 156-756, Korea
-
Hwang Hee
School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology, Ulsan 689-798, Korea
関連論文
- Dynamic analysis of bubble-driven liquid flows using time-resolved particle image velocimetry and proper orthogonal decomposition techniques
- Anti-stress and Anti-fatigue Effects of Fermented Rice Bran(Food & Nutrition Science)
- Colored Timed Petri-Nets Modeling and Job Scheduling Using GA of Semiconductor Manufacturing
- Investigation of turbulent flows in a waterjet intake duct using stereoscopic PIV measurements
- F207 COMPARATIVE STUDY ON THE NEAR WAKE OF A CIRCULAR CYLINDER : PIV, LES AND DNS(Complex turbulent flows)
- D212 EVOLUTION OF THE COUNTER-ROTATING VORTEX STRUCTURE IN A CROSSFLOW JET(Ventilation/vortex flow measurement)
- Dye-sensitized Solar Cells with Halide-bridged Mixed-valence Cu(I)-Cu(II) Coordination Polymers with Hexamethylenedithiocarbamate Ligand
- A301 EFFECT OF TRANSVERSE CONVEX CURVATURE ON THE ONSET OF NUCLEATE BOILING IN CONCENTRIC ANNULI : EXPERIMENTS(Subcooled boiling)
- Evolution of the Counter-Rotating Vortex Structure in a Crossflow Jet
- 516 A Study on Fabrication of PDP Barrier Ribs Using Micro Tooling Process
- Non-Quasi-Static Modeling of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor and Its Model Verification up to 1 THz
- Development of Counter-Rotating Vortex Pair in a Crossflow Jet
- Optical Transition of Eu3+ Ions in YMg2Al3B6O17
- Measurement of dissolved oxygen concentration field in a microchannel using PtOEP/PS film
- Study on the Valence State of Eu Ions in Sr3Al2O6:Eu Phosphor
- Synthesis and Conducting Properties of a New Mixed-valence Cu(I)-Cu(II) 1-D Coordination Polymer Bridged by Morpholine Dithiocarbamate
- Optical Properties of Blue-Light-Emitting (Ca,Sr)Mg2Si3O9:Eu2+ Phosphor
- Structural Investigation of Hybrid Organic Photovoltaic Devices with Single-Walled Carbon Nanotubes
- Design of a Third-Harmonic Gyrotron Oscillator Using a Photonic Crystal Cavity
- Extraction Method for Substrate-Related Components of Vertical Junctionless Silicon Nanowire Field-Effect Transistors and Its Verification on Radio Frequency Characteristics
- Design and Characterization of Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors
- Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid Process
- Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis
- Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs