An Analytic Current–Voltage Equation for Top-Contact Organic Thin Film Transistors Including the Effects of Variable Series Resistance

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概要

• 論文の詳細を見る

• An analytic current–voltage ($I$–$V$) equation for top-contact organic thin film transistors (OTFTs) is derived by analyzing the channel and the overlap region separately. From the analysis on the overlap region, the series resistance of OTFTs is found to be a function of the gate voltage due to the sheet resistance change of the accumulation layer. Using the derived $I$–$V$ equation, the characteristics of both the channel and the overlap region are well-explained. The $I$–$V$ equation is verified with fabricated top-contact OTFTs and metal–insulator–semiconductor (MIS) capacitors, and the predicted $I$–$V$ characteristics from the equation agree well with the measurements. Also, the ratio of the series resistance to the total resistance of the device is up to 60% which shows significant influence of the series resistance on top-contact OTFT performance.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• Lee Jong

  Inter-univ. Semicon. Res. Center Seoul Nat. Univ.

• Shin Hyungcheol

  Inter-university Semiconductor Research Center (isrc)

• Shin Hyungcheol

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea

• Jung Keum-Dong

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea

• Jung Keum-Dong

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea

• Kim Byeong-Ju

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea

• Kim Yoo

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea

• Kim Byeong-Ju

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea

• Lee Jong

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

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