Electrically Stable Organic Thin-Film Transistors and Circuits Using Organic/Inorganic Double-Layer Insulator

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概要

• 論文の詳細を見る

• Pentacene-based organic thin-film transistors (OTFTs) and organic circuits are fabricated using a plasma-enhanced chemical vapor deposition (PECVD) SiO2/cross-linked poly(vinyl alcohol) (PVA) double-layer insulator. A considerable reduction in hysteresis is achieved by optimizing the double-layer insulator thickness. The main mechanism of a low hysteresis is attributed to the balance of the injected electrons and induced holes at the interface. The fabricated devices have several advantages including low hysteresis characteristics and a stable performance. On the basis of the proposed OTFTs, an electrically stable organic inverter and a buffer working at a frequency as high as 1 kHz are fabricated.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-04-30

著者

• PARK Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu

• Jung Keum-dong

  Inter-university Semiconductor Research Center (isrc) And Semiconductor Materials And Devices Lab. (

• PARK Dong-Wook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul Na

• Lee Jong

  Inter-univ. Semicon. Res. Center Seoul Nat. Univ.

• Kim Byeong-ju

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat

• Shin Hyungcheol

  Inter-university Semiconductor Research Center (isrc)

• Lee Cheon

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea

• Jung Keum-Dong

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea

• Park Dong-Wook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea

• Kim Byeong-Ju

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea

• Lee Jong

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea

• Shin Hyungcheol

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

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