Implementation of Channel Thermal Noise Model in CMOS RFIC Design(Session8A: Si Devices III)

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概要

• 論文の詳細を見る

• In this paper, a simple channel thermal noise model for short-channel MOSFET is applied to the RF circuit design. In order to simulate MOSFET's noise performance in circuit simulators, a proper methodology is presented. The proposed noise model is verified by comparing simulated results to measured data at device and circuit level.

• 社団法人電子情報通信学会の論文
• 2008-07-02

著者

• Shin Hyungcheol

  Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci

• JEON Jongwook

  Inter-University Semiconductor Research Center (ISRC) and School of EE, Seoul National University

• SONG Ickhyun

  Inter-University Semiconductor Research Center (ISRC) and School of EE, Seoul National University

• Song Ickhyun

  School Of Electrical Engineering And Computer Science Seoul National University

• Song Ickhyun

  Inter-university Semiconductor Research Center (isrc):school Of Electrical Engineering Seoul Nationa

• Song Ickhyun

  Dept. Of Eecs Seoul National University

• Song Ickhyun

  Inter-university Semiconductor Research Center (isrc) And School Of Ee Seoul National University

• Shin Hyungcheol

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu

• Jeon Jongwook

  Inter-university Semiconductor Research Center (isrc) And School Of Ee Seoul National University

• Shin Hyungcheol

  Inter-university Semiconductor Research Center (isrc)

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