FN stess induced degradation on random telegraph signal noise in deep submicron NMOSFETs (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
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概要
- 論文の詳細を見る
As the gate area decreases to the order of a square micron, individual trapping events can be detected as fluctuations between discrete levels of the drain current, known as random telegraph signal (RTS) noise. In many circuit application areas such as CMOS Image sensor and flash memory are already suffering from RTS noise. Especially, in case of flash memory, FN stress causes threshold voltage shift problems due to generation of additional oxide traps, which degrades circuit performance. In this paper, we investigated how FN stress effects on RTS noise behavior in MOSFET and monitored it from the time domain and frequency domain.
- 社団法人電子情報通信学会の論文
- 2007-06-18
著者
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Shin Hyungcheol
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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Lee Hochul
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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LEE Hochul
Seoul National Univ. Dept. of EE
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YOON Youngchang
Seoul National Univ. Dept. of EE
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SHIN Hyungcheol
Seoul National Univ. Dept. of EE
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Yoon Youngchang
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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Shin Hyungcheol
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat
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Shin Hyungcheol
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
関連論文
- FN Stress Induced Degradation on Random Telegraph Signal Noise in Deep Submicron NMOSFETs
- Accurate Extraction of the Trap Depth from RTS Noise Data by Including Poly Depletion Effect and Surface Potential Variation in MOSFETs(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
- RF Linearity Analysis of FinFETs using 3-D Device Simulation (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- RF Linearity Analysis of FinFETs using 3-D Device Simulation (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Analysis of random telegraph signal noise in dual and single oxide device and its application to complementary metal oxide semiconductor image sensor readout circuit (Special issue: Solid state devices and materials)
- Analysis of Random Telegraph Signal Noise in Dual and Single Oxide Device And Its Application to CMOS Image Sensor Readout Circuit
- FN stess induced degradation on random telegraph signal noise in deep submicron NMOSFETs (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- FN stess induced degradation on random telegraph signal noise in deep submicron NMOSFETs (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Accurate Extraction of the Trap Depth From RTS Noise Data By including Poly Depletion Effect and Surface Potential Variation in MOSFETs(Session 7A Silicon Devices IV,AWAD2006)
- Accurate Extraction of the Trap Depth From RTS Noise Data By including Poly Depletion Effect and Surface Potential Variation in MOSFETs(Session 7A Silicon Devices IV,AWAD2006)
- Simultaneous Extraction of Locations and Energies of Two Independent Traps in Gate Oxide From Four-level RTS noise