Analysis of random telegraph signal noise in dual and single oxide device and its application to complementary metal oxide semiconductor image sensor readout circuit (Special issue: Solid state devices and materials)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Lee Hochul

  Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci

関連論文

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• Accurate Extraction of the Trap Depth from RTS Noise Data by Including Poly Depletion Effect and Surface Potential Variation in MOSFETs(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
• Analysis of random telegraph signal noise in dual and single oxide device and its application to complementary metal oxide semiconductor image sensor readout circuit (Special issue: Solid state devices and materials)
• Analysis of Random Telegraph Signal Noise in Dual and Single Oxide Device And Its Application to CMOS Image Sensor Readout Circuit
• FN stess induced degradation on random telegraph signal noise in deep submicron NMOSFETs (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• FN stess induced degradation on random telegraph signal noise in deep submicron NMOSFETs (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Accurate Extraction of the Trap Depth From RTS Noise Data By including Poly Depletion Effect and Surface Potential Variation in MOSFETs(Session 7A Silicon Devices IV,AWAD2006)
• Accurate Extraction of the Trap Depth From RTS Noise Data By including Poly Depletion Effect and Surface Potential Variation in MOSFETs(Session 7A Silicon Devices IV,AWAD2006)

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