Accurate Extraction of the Trap Depth From RTS Noise Data By including Poly Depletion Effect and Surface Potential Variation in MOSFETs(Session 7A Silicon Devices IV,AWAD2006)
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概要
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Accurate extraction of the trap position in the oxide in deep-submicron MOSFET by RTN measurement has been investigated both theoretically and experimentally. The conventional equation based on the ratio of emission time and capture time ignores two effects, that is, the poly gate depletion effect and surface potential variation in strong inversion regime. In this paper, by including both of the two effects, we have derived a new equation which gives us more accurate information of the trap depth from the interface and the trap energy. With experimental result, we provide the comparison of the trap depth obtained from the new equation and that of the conventional method.
- 社団法人電子情報通信学会の論文
- 2006-06-26
著者
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Shin Hyungcheol
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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Lee Hochul
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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LEE Hochul
Seoul National Univ. Dept. of EE
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YOON Youngchang
Seoul National Univ. Dept. of EE
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SHIN Hyungcheol
Seoul National Univ. Dept. of EE
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Yoon Youngchang
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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Shin Hyungcheol
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat
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Shin Hyungcheol
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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- Accurate Extraction of the Trap Depth From RTS Noise Data By including Poly Depletion Effect and Surface Potential Variation in MOSFETs(Session 7A Silicon Devices IV,AWAD2006)
- Accurate Extraction of the Trap Depth From RTS Noise Data By including Poly Depletion Effect and Surface Potential Variation in MOSFETs(Session 7A Silicon Devices IV,AWAD2006)
- Simultaneous Extraction of Locations and Energies of Two Independent Traps in Gate Oxide From Four-level RTS noise