Simultaneous Extraction of Locations and Energies of Two Independent Traps in Gate Oxide From Four-level RTS noise

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• LEE Hochul

  Seoul National Univ. Dept. of EE

• SHIN Hyungcheol

  Seoul National Univ. Dept. of EE

• YANG Seungwon

  Seoul National Univ. Dept. of EE

関連論文

• Analysis of Random Telegraph Signal Noise in Dual and Single Oxide Device And Its Application to CMOS Image Sensor Readout Circuit
• FN stess induced degradation on random telegraph signal noise in deep submicron NMOSFETs (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• FN stess induced degradation on random telegraph signal noise in deep submicron NMOSFETs (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Accurate Extraction of the Trap Depth From RTS Noise Data By including Poly Depletion Effect and Surface Potential Variation in MOSFETs(Session 7A Silicon Devices IV,AWAD2006)
• Accurate Extraction of the Trap Depth From RTS Noise Data By including Poly Depletion Effect and Surface Potential Variation in MOSFETs(Session 7A Silicon Devices IV,AWAD2006)
• Simultaneous Extraction of Locations and Energies of Two Independent Traps in Gate Oxide From Four-level RTS noise

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