Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics
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概要
- 論文の詳細を見る
We firstly propose a novel U-shape resistive cell structure which is the best fit for generating low power resistive random access memory (RRAM) with forming-less process. We find that irregular resistive switching behavior in the initial transition and the characteristics associated with it. Controlling the conducting filament (CF) dimension and deposition orientation of resistive material are expected to reduce the distribution and forming voltage, which enables low power RRAM to be feasible without forming state. Simple fabrication flow and device performances are also evaluated in the aspect of forming-less process. Numerical simulation is performed using random circuit breaker model (RCB) to confirm the proposed structure.
- 2011-04-25
著者
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Ryoo Kyung-chang
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Computer Science Seoul National University
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Oh Jeong-hoon
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Computer Science Seoul National University
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Jung Sunghun
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Computer Science Seoul National University
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Park Byung-Gook
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Jeong Hongsik
DRAM Process Architecture Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., Yongin, Gyeonggi 445-701, Republic of Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Oh Jeong-Hoon
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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