Jeong Hongsik | DRAM Process Architecture Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., Yongin, Gyeonggi 445-701, Republic of Korea
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概要
- Jeong Hongsikの詳細を見る
- 同名の論文著者
- DRAM Process Architecture Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., Yongin, Gyeonggi 445-701, Republic of Koreaの論文著者
関連著者
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Ryoo Kyung-chang
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Computer Science Seoul National University
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Oh Jeong-hoon
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Computer Science Seoul National University
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Jung Sunghun
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Computer Science Seoul National University
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Jeong Hongsik
DRAM Process Architecture Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., Yongin, Gyeonggi 445-701, Republic of Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Ryoo Kyung-Chang
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Oh Jeong-Hoon
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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PARK Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu
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Kim Sungjun
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
著作論文
- Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics
- Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory Structure (Special Issue : Solid State Devices and Materials (2))
- Novel Protruded-Shape Unipolar Resistive Random Access Memory Structure for Improving Switching Uniformity through Excellent Conductive Filament Controllability
- Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics