Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics

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概要

• 論文の詳細を見る

• A new technical improvement in understanding the resistive switching characteristics of unipolar resistive random access memory (RRAM) is investigated. It is possible to minimize reset current (I_{\text{RESET}}), set voltage variation, and forming voltage (V_{\text{FORMING}}), which results in a wide sensing margin and high density applications by using a conducting filament (CF) minimized structure up to a 10 nm technology node. Its structural advantages enable I_{\text{RESET}} to be tuned with excellent manufacturability. Numerical simulation is also performed using a random circuit breaker (RCB) model, showing that the proposed structure elucidates the resistive switching improvement.

• 2012-04-25

著者

• Ryoo Kyung-chang

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Computer Science Seoul National University

• Oh Jeong-hoon

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Computer Science Seoul National University

• Jung Sunghun

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Computer Science Seoul National University

• Ryoo Kyung-Chang

  Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

• Jeong Hongsik

  DRAM Process Architecture Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., Yongin, Gyeonggi 445-701, Republic of Korea

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

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