Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics (Special Issue : Solid State Devices and Materials (2))

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Jung Sunghun

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Computer Science Seoul National University

関連論文

• Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics
• Reset Current Reduction with Excellent Filament Controllability by Using Area Minimized and Field Enhanced Unipolar Resistive Random Access Memory Structure (Special Issue : Solid State Devices and Materials (2))
• Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation (Special Issue : Solid State Devices and Materials (2))
• Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics (Special Issue : Solid State Devices and Materials (2))
• Novel Protruded-Shape Unipolar Resistive Random Access Memory Structure for Improving Switching Uniformity through Excellent Conductive Filament Controllability
• Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics
• Effects of Conductive Defects on Unipolar RRAM for the Improvement of Resistive Switching Characteristics
• Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO2-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation

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