Enhancement of Radiative Recombination by Different Indium Composition of Multiple Quantum Barriers in GaN-Based Light-Emitting Diodes (Special Issue : Microprocesses and Nanotechnology)

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概要

• 論文の詳細を見る

著者

• Kim Wandong

  Inter-university Semiconductor Research Center

• Kim Garam

  Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

• Park Euyhwan

  Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

• Kim Janghyun

  Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

• Kang Donghoon

  Samsung Electronics Co., Ltd., Yongin, Gyeonggi 446-711, Republic of Korea

• Son Joong-Kon

  Samsung Electronics Co., Ltd., Yongin, Gyeonggi 446-711, Republic of Korea

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

関連論文

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• Enhancement of Radiative Recombination by Different Indium Composition of Multiple Quantum Barriers in GaN-Based Light-Emitting Diodes (Special Issue : Microprocesses and Nanotechnology)

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