Deposition of SiO2 by Plasma Enhanced Chemical Vapor Deposition as the Diffusion Barrier to Polymer Substrates
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概要
- 論文の詳細を見る
SiO2 thin films were deposited at the temperatures $<150$°C by plasma enhanced chemical vapor deposition (PECVD) using a tetraethylorthosilicate (TEOS)/N2/O2 gas mixture, and the physical and chemical characteristics as well as the characteristics as a transparent diffusion barrier to H2O were investigated. Using a gas combination of TEOS(40 sccm)/O2(500 sccm)/N2(100 sccm) at source power of 500 W and dc bias voltage of $-350$ V, SiO2 with a stoichometric composition of SiO2 and a smooth surface similar to the substrate could be deposited. When a multilayer diffusion barrier composed of parylene(800 nm)/SiO2(100 nm)/parylene(800 nm)/SiO2(100 nm)/parylene(800 nm) was formed on a polyethersulfone (PES) substrate, the water vapor transmission rate (WVTR) of the substrate was decreased from 54.1 to 0.3 gm/(m2$\cdot$day).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-02-15
著者
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Lee June
Department Of Advanced Materials Science And Engineering Sungkyunkwan University
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Moon Cheol
Pdp Division Samsung Sdi Co. Ltd.
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Cho Nam
Department Of Applied Chemical Engineering Korea University Of Technology & Education
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Jeong Chang
Department Of Advanced Materials Science And Engineering Sungkyunkwan University
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Lim Jong
Department Of Advanced Materials Science And Engineering Sungkyunkwan University
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Yeom Geun
Department Of Advanced Materials Science And Engineering Sungkyunkwan University
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Yeom Geun
Department of Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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Lim Jong
Department of Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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Lim Jong
Department of Advanced Materials Engineering, Sungkyunkwan University, Suwon, Gyunggi-do 440-746, Korea
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Lee June
Department of Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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Cho Nam
Department of Materials Science & Engineering, Sungkyunkwan University, Suwon 440-746, Korea
-
Yeom Geun
Department of Advanced Materials Engineering, Sungkyunkwan University, Suwon, Gyunggi-do 440-746, Korea
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Yeom Geun
Department of Advanced Materials Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Republic Korea
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