Deposition of SiO_2 by Plasma Enhanced Chemical Vapor Deposition as the Diffusion Barrier to Polymer Substrates
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-02-15
著者
-
CHO Nam
Department of Preventive Medicine, Ajou University School of Medicine
-
Cho Nam
Department Of Materials Science & Engineering Sungkyunkwan University
-
Yeom G
Sungkyunkwan Univ. Kyounggi Kor
-
Yeom Geun
Sungkyunkwan Univ. Suwon Kor
-
JEONG Chang
Department of Materials Science & Engineering, Sungkyunkwan University
-
LEE June
Department of Materials Science & Engineering, Sungkyunkwan University
-
LIM Jong
Department of Materials Science & Engineering, Sungkyunkwan University
-
MOON Cheol
PDP Division, Samsung SDI Co., Ltd.
-
YEOM Geun
Department of Materials Science & Engineering, Sungkyunkwan University
-
Lee June
Department Of Advanced Materials Science And Engineering Sungkyunkwan University
-
Jeong Chang
Sungkyunkwan Univ. Suwon Kor
-
Lim Jong
Sungkyunkwan Univ. Suwon Kor
-
Lee J
System Ic R&d Division Hynix Semiconductor Inc.
関連論文
- Incidence of hip fractures in Korea
- Deposition of SiO_2 by Plasma Enhanced Chemical Vapor Deposition as the Diffusion Barrier to Polymer Substrates
- Characteristics of Organic Light-Emitting Devices by the Surface Treatment of Indium Tin Oxide Surfaces Using Atmospheric Pressure Plasmas
- Recombinant Human Epidermal Growth Factor (rhEGF) Protects Radiation-Induced Intestine Injury in Murine System
- Effect of N_2O to C_4F_8/O_2 on Global Warming during Silicon Nitride Plasma Enhanced Chemical Vapor Deposition (PECVD) Chamber Cleaning Using a Remote Inductively Coupled Plasma Source : Nuclear Science, Plasmas, and Electric Discharges
- C_4F_8O/O_2/N-based Additive Gases for Silicon Nitride Plasma Enhanced Chemical Vapor Deposition Chamber Cleaning with Low Global Warming Potentials
- Stress-Driven Formation of InGaAs Quantum Dots on GaAs with Sub-Micron Platinum Pattern
- Characteristics of a Multilayer SiO_x(CH)_yN_z Film Deposited by Low Temperature Plasma Enhanced Chemical Vapor Deposition Using Hexamethyldisilazane/Ar/N_2O
- Brassinolide and [26, 28-^2H_6] Brassinolide Are Differently Demethylated by Loss of C-26 and C-28, Respectively, in Marchantia polymorpha
- Gate Engineering to Prevent NMOS Dopant Channeling for Nanoscale CMOSFET Technology