Characteristics of Parallel Internal-Type Inductively Coupled Plasmas for Large Area Flat Panel Display Processing

概要

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The development of a large-area high-density plasma source is desired for various plasma processes from microelectronics fabrication to flat panel display (FPD) device fabrication. In this study, using a parallel internal-type (double comb-type) inductively coupled plasma source having the size of $1020\,\text{mm}\times 830\,\text{mm}$, high density plasmas on the order of $2.2\times 10^{11}$ cm-3 could be obtained with Ar at 5000 W inductive power. Plasma uniformity on the substrate in the size of $920\,\text{mm}\times 730\,\text{mm}$ decreased with the increase in inductive power and was about 8% when the inductive power was 5000 W. When SF6 was used to etch SiO2 using the source, the SiO2 etch rate higher than 2000 Å/min with an etch uniformity of about 6% could be obtained at 5000 W inductive power, $-350$ V bias voltage, and 15 mTorr operating pressure.
2004-07-15