Low-Temperature Growth of Carbon Nanotube by Plasma-Enhanced Chemical Vapor Deposition using Nickel Catalyst

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-06-15

著者

• JEON Hyeongtag

  Division of Materials Science and Engineering, Hanyang University

• KIM Yangdo

  School of Materials Science and Engineering, Pusan National University

• Kim Yangdo

  School Of Materials Science And Engineering Pusan National University

• RYU Kyoungmin

  Division of Materials Science and Engineering, Hanyang University

• KANG Mihyun

  Division of Materials Science and Engineering, Hanyang University

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• Microstructure Effect on the High-Temperature Oxidation Resistance of Ti-Si-N Coating Layers
• Low-Temperature Growth of Carbon Nanotube by Plasma-Enhanced Chemical Vapor Deposition using Nickel Catalyst
• Surface Characteristics of Indium-Tin Oxide Cleaned by Remote Plasma
• Removal of the Polymer Formed at Via Hole with Via Etching Stopped on an Al layer Structure
• Low-Temperature Growth of Carbon Nanotube by Plasma-Enhanced Chemical Vapor Deposition using Nickel Catalyst
• Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
• Microstructure Effect on the High-Temperature Oxidation Resistance of Ti–Si–N Coating Layers
• Comparison of TiN Films Deposited Using Tetrakisdimethylaminotitanium and Tetrakisdiethylaminotitanium by the Atomic Layer Deposition Method
• Characteristics of Polymer Residues Formed at the Via Hole and Photoresist Ashing Properties of Remote Oxygen/Nitrogen Plasma

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