Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
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概要
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The barrier characteristics of ZrN films deposited by remote plasma-enhanced atomic layer deposition (PEALD) using Zr[NEt2]4 [tetrakis(diethylamino)zirconium, TDEAZ] and N2 remote plasma have been investigated using various deposition parameters, such as temperature, plasma power, and processing pressure. The optimized processing temperature, plasma power, and pressure were 300 °C, 200 W, and 1 Torr, respectively. ZrN films deposited by remote PEALD using TDEAZ and N2 remote plasma showed a carbon content of about 6 at. %. The resistivity of ZrN films was about 400 μ$\Omega$$\cdot$cm. The barrier characteristics of Cu/ZrN/Si samples have been investigated by X-ray diffraction (XRD) analysis, Auger electron spectroscopy (AES), and etch-pit test after annealing in vacuum for 1 h in the temperature range of 500–700 °C with an interval of 50 °C. The structure of ZrN films remained amorphous up to 550 °C and crystallized after annealing above 600 °C. The barrier characteristics of ZrN films remained up to 550 °C. ZrN films deposited by remote PEALD are believed to be applicable as barriers for Cu metallization in a semiconductor process.
- 2007-07-15
著者
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Kim Yangdo
School Of Materials Science And Engineering Pusan National University
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Jeon Hyeongtag
Division Of Materials Science & Engineering Hanyang University
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Lee Keunwoo
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
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Lee Keunwoo
Division Of Materials Science And Engineering Hanyang University
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Cho Seungchan
School of Materials Science and Engineering, Pusan National University, Busan 609-735, Korea
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Song Pungkeun
School of Materials Science and Engineering, Pusan National University, Busan 609-735, Korea
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Kim Yangdo
School of Materials Science and Engineering, Pusan National University, Busan 609-735, Korea
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Jeon Hyeongtag
Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
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