Reduction of RuO₂ Film to Metallic Ru Film Using Atomic Layer Deposition under Different Oxygen Partial Pressure (Special Issue : Advanced Metallization for ULSI Applications)
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概要
- 論文の詳細を見る
Thin ruthenium oxide film deposition on 100 nm SiO<inf>2</inf>substrate by thermal atomic layer deposition (ALD) prior to ruthenium deposition. RuO<inf>2</inf>was totally reduced to metallic Ru film when Ru deposition process with low oxygen partial pressure. Using this technique, we can improve overall deposition speed by reducing incubation time which is major problem of deposition Ru film. In addition, we compare properties of Ru film deposited by thermal ALD directly deposited on SiO<inf>2</inf>substrate and Ru film obtained from reduction of RuO<inf>2</inf>film. The Ru film from RuO<inf>2</inf>has smoother surface RMS roughness than Ru film directly deposited on SiO<inf>2</inf>substrate.
- 2013-05-25
著者
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Jeon Hyeongtag
Division Of Materials Science & Engineering Hanyang University
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Park Taeyong
Division Of Materials Science And Engineering Hanyang University
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Jeon Heeyoung
Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791, Korea
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Lee Jaesang
Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791, Korea
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Park Jingyu
Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791, Korea
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