Improvement of thermal stability of nickel silicide film using NH

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In this study, the effects of NH<inf>3</inf>plasma pre-treatment on the characteristics of NiSi films were investigated. Nickel film was deposited on a Si(100) substrate by meal-organic chemical vapor deposition (MOCVD) using Ni(<sup>i</sup>Pr-DAD)<inf>2</inf>as a Ni precursor and NH<inf>3</inf>gas as a reactant. Before the Ni deposition, silicon substrate was treated by NH<inf>3</inf>plasma with various flow rates to adjust the amount of inserted hydrogen and nitrogen atoms. The Ni films showed a considerable low sheet resistance around 12 Ω/□, irrespective of the NH<inf>3</inf>plasma pre-treatment conditions. The sheet resistance of the all Ni films was decreased after annealing at 500 °C due to formation of a low resistive NiSi phase. NiSi films with a high flow rate of NH<inf>3</inf>plasma pre-treatment exhibited a lower sheet resistance and smoother interface between NiSi and the Si substrate than the low flow rate of the NH<inf>3</inf>plasma pre-treated NiSi films because lots of nitrogen atoms incorporated at grain boundary of NiSi which result in reduce total surface/interface energy of NiSi and enhancement interface characteristics.
2014-09-02