Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide
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概要
- 論文の詳細を見る
Characterized herein is a different physical mechanism for the formation of Ni silicide by incorporating rare earth (RE) metals such as ytterbium (Yb), erbium (Er), and dysprosium (Dy). Although the incorporation of any RE metal increases the Schottky barrier height (SBH) for holes in Ni silicide due to the formation of a ternary phase silicide, Yb induced the greatest increase in SBH because, unlike the other metals, Yb atoms accumulated at the silicide/silicon interface.
- 2010-05-25
著者
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OH Jungwoo
SEMATECH
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Raj Jammy
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.
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Se-Kyung Oh
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea
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Zhang Ying-Ying
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea
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Jung Soon-Yen
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea
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Hong-Sik Shin
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea
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Jin-Suk Wang
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea
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Prashant Majhi
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.
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Hi-Deok Lee
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea
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Ying-Ying Zhang
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea
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Soon-Yen Jung
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea
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