OH Jungwoo | SEMATECH
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概要
関連著者
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OH Jungwoo
SEMATECH
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Jammy Raj
Sematech
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Majhi Prashant
Sematech
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Tseng Hsing-huang
Sematech
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Lee Se-hoon
University Of Texas At Austin
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Harris Rusty
Sematech
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Banerjee Sanjay
University Of Texas At Austin
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LEE Hideok
University of Texas at Austin
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Lee Hi-deok
Department Of Electronics Engineering Chungnam National University
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Lee Ga-won
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Kang Chang
Sematech
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SUGAWARA Takuya
Tokyo Electron Ltd.
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Kalra Pankaj
University Of California At Berkeley
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Akasaka Yasushi
Tokyo Electron Ltd.
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Lee Se-hoon
Sematech
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Huang Jeff
Sematech
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OK Injo
SEMATECH
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KIRSCH Paul
SEMATECH
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LEE Hi-Deok
Chungnam National University
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Kang Chang
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.
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Shin Hong-Sik
Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea
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Raj Jammy
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.
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Jammy Raj
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.
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Lee Hi-Deok
University of Texas at Austin, 10100 Burnet Road, Austin, TX 78758, U.S.A.
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Joe Raymond
Tokyo Electron America Inc., 2400 Grove Blvd., Austin, TX 78741, U.S.A.
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Kaitsuka Takanobu
Tokyo Electron Ltd., Akasaka Biz Tower, 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325, Japan
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Arikado Tsunetoshi
Tokyo Electron Ltd., Akasaka Biz Tower, 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325, Japan
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Tomoyasu Masayuki
Tokyo Electron Ltd., Akasaka Biz Tower, 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325, Japan
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Se-Kyung Oh
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea
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Zhang Ying-Ying
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea
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Jung Soon-Yen
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea
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Hong-Sik Shin
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea
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Jin-Suk Wang
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea
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Prashant Majhi
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.
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Hi-Deok Lee
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea
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Majhi Prashant
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.
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Ying-Ying Zhang
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea
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Akasaka Yasushi
Tokyo Electron Ltd., Akasaka Biz Tower, 3-1 Akasaka 5-chome, Minato-ku, Tokyo 107-6325, Japan
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Tseng Hsing-Huang
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.
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Banerjee Sanjay
University of Texas at Austin, 10100 Burnet Road, Austin, TX 78758, U.S.A.
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Sugawara Takuya
Tokyo Electron AT Ltd., Technology Development Center, 650, Hosaka-cho Mitsuzawa, Nirasaki, Yamanashi 407-0192, Japan
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Soon-Yen Jung
Department of Electronics Engineering, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea
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Oh Jungwoo
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, U.S.A.
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KWON Hyuk-Min
Department of Electronics Engineering, Chungnam National University
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Oh Se-Kyung
Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea
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Kang Min-Ho
Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea
著作論文
- Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si MOS Capacitors and Field Effect Transistors
- High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2 High-$k$ Dielectric and Metal Gate
- Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide
- High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility
- Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si Metal–Oxide–Semiconductor Capacitors and Field Effect Transistors
- Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal-Oxide-Semiconductor Field Effect Transistors (Special Issue : Solid State Devices and Materials (1))